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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() VS-ENM040M60P $47.81 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 61A EMIPAK-1B | Bulk | EMIPAK-1B | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD | Bulk | - | - | - | - | |
![]() VS-ENV020F65U $29.86 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENV020M120M $32.19 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENW30S120T $90.93 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENY050C60 $41.24 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENZ025C60N $47.81 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |