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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 108A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 127A ECONO3 4PACK | Bulk | ECONO3 4PACK | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 300A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 182A ECONO3 4PACK | Bulk | ECONO3 4PACK | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 30A 187W MTP | Bulk | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 360A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 330A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 620A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) |