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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG5K100HF12A $41.63 | Infineon Technologies | IGBT MOD 1200V 200A POWIR 34 | Box | POWIR® 34 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG5K30FF06Z $20.37 | Infineon Technologies | IGBT MOD 600V 60A EZIRPACK 1 | Box | EZIRPACK 1™ | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG5K400HF06B $75.65 | Infineon Technologies | IGBT MOD 600V 670A POWIR 62 | Box | POWIR® 62 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG5U200HF12B $86.36 | Infineon Technologies | IGBT MOD 1200V 285A POWIR 62 | Box | POWIR® 62 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG5U400SD12B $87.81 | Infineon Technologies | IGBT MOD 1200V 600A POWIR 62 | Box | POWIR® 62 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG5U50HH12E $54.59 | Infineon Technologies | IGBT MOD 1200V 85A POWIR ECO 2 | Box | POWIR ECO 2™ | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() IRG6B330UDPBF $2.01 | International Rectifier | IGBT TRENCH 330V 70A TO-220AB | Bulk | TO-220AB | Through Hole | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT TRENCH 330V 24A TO-220AB | Tube | TO-220AB | Through Hole | - | -40°C ~ 150°C (TJ) |

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