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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT MODULE 600V 90A 280W E2BoxE2Chassis Mount--40°C ~ 150°C (TJ)
IXYSIGBT MODULE 1200V 125A 500WTube-Chassis Mount--
IXYSIGBT MODULE 1200V 130A 500W E3BoxE3Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 1200V 110A 355W E2BoxE2Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 1200V 110A 360W E3BoxE3Chassis Mount--40°C ~ 125°C (TJ)
IXYSIGBT MODULE 1200V 80A 270W E1BoxE1Chassis Mount--40°C ~ 125°C (TJ)
onsemiIGBT TRENCH FS 750V 225A WAFERTape & Reel (TR)WaferSurface Mount--40°C ~ 175°C (TJ)
onsemiEXCITER MOTOR APPLICATION AUTOMOBulkASPMCA-A16Through HoleASPM16-40°C ~ 175°C (TJ)
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