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1N1184R is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD REV 100V 35A DO5. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N1184R is a silicon standard recovery rectifier diode housed in a DO-5 (DO-203AB) stud-mount package. It features a maximum repetitive peak reverse voltage of 100 V and supports a continuous forward current of 35 A. The device exhibits a maximum forward voltage of 1.2 V at 35 A and a reverse leakage current of 10 µA at 50 V. It operates within a junction temperature range of -55 °C to 150 °C, with a thermal resistance from junction to case of 0.25 °C/W.
Verify the specific manufacturer source, as GeneSiC Semiconductor products may be distributed by other entities such as Navitas Semiconductor or Vishay. Confirm that the reverse polarity designation (stud as anode) matches the circuit design requirements. Ensure the thermal management system can maintain the case temperature below 140 °C during operation to prevent exceeding the maximum junction temperature rating.
Select this component when a 100 V blocking voltage and 35 A continuous current are required in a stud-mount form factor. The reverse polarity variant is necessary if the circuit topology requires the mounting base to serve as the anode connection rather than the cathode. Consider the 0.25 °C/W thermal resistance for heat sink sizing calculations to ensure reliable operation under load.
This part belongs to the 1N1183 thru 1N1187R series of silicon standard recovery diodes. The series offers voltage ratings ranging from 50 V to 300 V while maintaining a consistent 35 A continuous forward current capability across all variants. The DO-5 package provides a robust mechanical interface suitable for high-power industrial applications.
The 1N1184 serves as the standard polarity equivalent, differing only in terminal configuration where the stud acts as the cathode instead of the anode.
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