1N1190R

Single Diodes Overview

The GeneSiC Semiconductor 1N1190R is a silicon standard recovery rectifier diode housed in a DO-5 (DO-203AB) stud package. It features a maximum repetitive peak reverse voltage of 600 V and a continuous forward current rating of 35 A. The device supports a surge non-repetitive forward current of 595 A under half-sine wave conditions. Electrical characteristics include a maximum DC blocking voltage of 600 V and a forward voltage of 1.2 V at 35 A. Operating temperatures range from -55°C to 150°C, with a thermal resistance junction-to-case of 0.25 °C/W.

Single Diodes Feature Summary

• High surge capability for handling transient current loads
• Stud base configuration for direct mounting to heatsinks
• Reverse polarity variant available where the stud functions as the anode

Single Diodes Applications

• Industrial power supply rectification
• General purpose high-voltage rectifier circuits
• Battery charging systems requiring robust surge tolerance

Single Diodes Procurement Notes

Verify the specific suffix designation to confirm terminal polarity, as the 'R' variant reverses the standard stud cathode configuration to an anode. Confirm compliance with RoHS directives prior to procurement, as this component series may not meet all environmental standards. Ensure the ordering quantity aligns with manufacturer minimums and verify lead times due to potential manufacturing changes affecting availability.

Single Diodes Selection Notes

Select the 1N1190R when a 600 V blocking voltage and 35 A continuous current are required in a stud-mountable form factor. Consider the reverse polarity option if circuit design necessitates the stud connection to serve as the positive terminal. Evaluate thermal management requirements against the 0.25 °C/W junction-to-case resistance to ensure operation within the specified temperature limits during high-load scenarios.

Single Diodes Part Context

This component belongs to the 1N1188 through 1N1190R series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series utilizes a rugged DO-5 package designed for high-power applications. These devices are engineered for reliability in environments demanding high surge currents and stable performance across wide temperature ranges.

Single Diodes Replacement Considerations

Cross-reference with other 600 V, 35 A stud-mounted diodes from compatible manufacturers. Verify that substitute parts match the DO-5 mechanical dimensions and electrical ratings, specifically the 595 A surge current capacity and 0.25 °C/W thermal resistance.