1N1191

Single Diodes Overview

The Microchip Technology 1N1191 is a standard recovery silicon power rectifier designed for high-current applications. It features a DO-203AB (TO-5) stud mount package with glass passivated die construction and a glass-to-metal seal. Key electrical parameters include a maximum average forward current of 40 A, a peak repetitive reverse voltage of 50 V, and a maximum surge current rating of 800 A. The device exhibits a typical forward voltage drop of 1.19 V at rated current and a low reverse leakage current of 10 µA. It operates within a junction temperature range of -65 °C to +200 °C.

Single Diodes Feature Summary

• Utilizes glass passivated die technology for enhanced reliability and stability under harsh conditions.
• Features robust glass-to-metal seal construction suitable for stud mounting configurations.
• Provides high surge current capability to withstand transient load events.

Single Diodes Applications

• Industrial power supply systems requiring high current rectification
• Military and aerospace electronic equipment
• IoT infrastructure power management modules

Single Diodes Procurement Notes

Verify the specific suffix designation when ordering, as variants such as 1N1191AR may exist with different packaging or qualification standards. Confirm RoHS compliance status directly with the manufacturer, as historical data indicates non-compliance for certain revisions. Ensure the procurement channel provides official datasheets matching the exact part number to avoid discrepancies in voltage ratings or package types.

Single Diodes Selection Notes

Select this component for applications demanding high thermal stability up to 200 °C and significant surge tolerance. The 40 A continuous current rating makes it suitable for medium-to-high power conversion stages. Consider the stud mount requirement for thermal dissipation solutions. Compare against higher voltage variants if system transients exceed 50 V reverse blocking requirements.

Single Diodes Part Context

The 1N1191 belongs to the broader family of silicon power rectifiers produced by Microchip Technology (formerly Microsemi). This series is characterized by rugged construction intended for demanding environments. The component serves as a fundamental building block in power electronics, offering a balance of current handling capacity and reverse voltage blocking in a standardized axial leaded package format.

Single Diodes Replacement Considerations

Cross-reference with 1N1191AR for potential packaging differences. Verify compatibility with other 40 A, 50 V silicon rectifiers from manufacturers like Vishay or Diotec, ensuring identical pinout and thermal characteristics are maintained during substitution.

Single Diodes FAQ

What is the maximum operating junction temperature for the 1N1191?

The maximum operating junction temperature is +200 °C.

Does the 1N1191 use a glass passivated die?

Yes, the device utilizes a glass passivated die with glass-to-metal seal construction.