1N3768R

Single Diodes Overview

The Microchip Technology 1N3768R is a standard recovery rectifier diode designed for high-power applications. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 35 A. The device utilizes a DO-203AB (DO-5) package with stud mount installation. Key electrical characteristics include a maximum forward voltage of 1.4 V at 110 A and a reverse leakage current of 10 µA at 1000 V. The junction temperature range spans from -65°C to 175°C, ensuring reliable operation in demanding environments.

Single Diodes Feature Summary

• High-voltage capability with a 1000 V maximum repetitive peak reverse voltage rating
• Robust current handling with a 35 A average forward rectified current specification
• Extended thermal performance supporting junction temperatures up to 175°C
• Standard recovery speed suitable for general-purpose power conversion

Single Diodes Applications

• Industrial power supply circuits
• Battery charging systems
• DC-to-AC inverters

Single Diodes Procurement Notes

Verify the specific suffix 'R' against the manufacturer's official datasheet to confirm packaging or material variations. Confirm RoHS compliance status as legacy parts may differ from current standards. Validate the DO-203AB package dimensions and mounting torque requirements before integration. Ensure the supplier provides traceable documentation matching the Microchip Technology part number.

Single Diodes Selection Notes

Select this component when a single-phase silicon rectifier with high voltage blocking capability is required. The 35 A current rating suits moderate to high-power designs. Consider the stud mount configuration for effective heat dissipation. Compare the 1.4 V forward voltage drop against efficiency requirements. Verify that the 1000 V reverse voltage exceeds the circuit's peak inverse voltage.

Single Diodes Part Context

This part belongs to the 1N3765 through 1N3768 series of high-power rectifiers manufactured by Microchip Technology. These devices are engineered for robust performance in industrial and automotive power electronics. The series shares similar mechanical footprints but varies in voltage and current ratings. The 1N3768R represents the higher voltage variant within this specific product line.

Single Diodes Replacement Considerations

Consult the official Microchip datasheet for cross-reference information. Potential substitutes must match the 1000 V reverse voltage, 35 A current, and DO-203AB package. Verify equivalent forward voltage and reverse leakage specifications.