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1N3889R is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD REV 50V 12A DO4. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N3889R is a silicon fast recovery rectifier diode housed in a DO-4 (DO-203AA) stud mount package. It features a repetitive peak reverse voltage of 50 V and a continuous forward current rating of 12 A. The device exhibits a maximum forward voltage of 1.4 V at 12 A and a maximum reverse recovery time of 200 ns. It supports a surge non-repetitive forward current of 90 A and operates within a junction temperature range of -55 °C to +150 °C. The thermal resistance from junction to case is 2.0 °C/W.
Verify the specific suffix 'R' indicates reversed polarity where the stud functions as the anode rather than the standard cathode configuration. Confirm the manufacturer designation, as sourcing data may list Navitas Semiconductor or GeneSiC Semiconductor for this component family. Ensure the DO-4 package dimensions match the required mounting hardware specifications before procurement.
Select this component when a 50 V blocking voltage and 12 A continuous current are required in a stud-mount form factor. The 200 ns recovery time suits general fast recovery applications. Consider the reversed polarity configuration if the circuit design requires the stud terminal to serve as the anode connection point.
This part belongs to the 1N3889 series of silicon fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 400 V, all sharing similar current and thermal characteristics. The DO-4 package provides a robust mechanical interface for high-power industrial environments.
Cross-reference with Vishay VS-1N3889 for equivalent electrical performance in a DO-4 package. Verify polarity orientation differences between standard and reversed ('R') suffixes when substituting.
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