Single Diodes 1N4150_T50R product image

1N4150_T50R

  • Description:DIODE STANDARD 50V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:6a7514e5632f Category: Brand:

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1N4150_T50R is listed in the Single Diodes range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE STANDARD 50V 200MA DO35. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N4150_T50R

  • Description:DIODE STANDARD 50V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):6 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 50 V
  • Capacitance @ Vr, F:2.5pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:175°C (Max)
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for 1N4150_T50R

1N4150_T50R

Single Diodes Overview

The onsemi 1N4150_T50R is a high conductance ultra-fast diode sourced from Process 1R. It features a working inverse voltage of 50 V and an average rectified current of 200 mA. The device exhibits a breakdown voltage of 75 V at 5.0 μA reverse current, with a maximum reverse current of 100 nA at 50 V. Electrical characteristics include a forward voltage ranging from 540 mV to 1.0 V depending on current levels, and a diode capacitance of 2.5 pF. Reverse recovery time is specified as 4.0 ns for currents between 10 mA and 200 mA, extending to 6.0 ns for higher current ranges.

Single Diodes Feature Summary

  • Ultra-fast switching performance with low reverse recovery time
  • High conductance design optimized for efficient signal handling
  • Robust thermal stability supporting operation up to 175°C junction temperature

Single Diodes Applications

  • High-speed signal switching circuits
  • Pulse generation and shaping applications
  • General purpose rectification in compact designs

Single Diodes Procurement Notes

Verify the specific ordering suffix _T50R against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with automated placement equipment requirements. Cross-reference the manufacturer part number with the distributor catalog to validate component authenticity and traceability before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for applications requiring fast recovery times and low capacitance in small packages. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment. Compare the forward voltage drop characteristics against circuit efficiency requirements to ensure optimal performance under varying load conditions.

Single Diodes Part Context

This component belongs to the discrete power and signal technologies category, specifically designed as a high conductance ultra-fast diode. It utilizes Process 1R technology to achieve superior switching speeds compared to standard silicon diodes. The device is suitable for space-constrained designs requiring reliable high-frequency operation.

Single Diodes Replacement Considerations

Consult the datasheet for equivalent devices such as the FDLL4150. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure that any replacement maintains the required reverse recovery time and voltage ratings for the specific application.

1N4150_T50R1N4150_T50R

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