Diode Arrays 1N4150UBCA product image

1N4150UBCA

$18.71
  • Description:DIODE ARRAY GP 50V 200MA UBC
  • Series:-

SKU:a6b920840c23 Category: Brand:

  
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1N4150UBCA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 50V 200MA UBC. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for 1N4150UBCA

  • Description:DIODE ARRAY GP 50V 200MA UBC
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UBC
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for 1N4150UBCA

1N4150UBCA

Diode Arrays Overview

The Microchip Technology 1N4150UBCA is a hermetically sealed silicon signal diode designed for high-reliability applications. It features a three-pin ceramic package with double plug construction and metallurgical bonding. The device operates within a junction temperature range of -65°C to +175°C. Key electrical characteristics include a maximum repetitive peak reverse voltage of 50 V and a non-repetitive peak forward surge current capability of 4 A for a 1 µs pulse duration.

Diode Arrays Feature Summary

  • Hermetically sealed construction utilizing a three-pin ceramic package for environmental protection
  • Double plug construction with metallurgical bonding to ensure structural integrity
  • Designed for operation in extreme thermal environments up to +175°C junction temperature

Diode Arrays Applications

  • Military aerospace systems requiring MIL-PRF-19500/231 compliance
  • High-reliability computer diode circuits
  • Signal switching applications in harsh industrial environments

Diode Arrays Procurement Notes

Verify the specific revision level and lot traceability upon order confirmation, as military-grade components often require strict adherence to quality standards. Confirm that the delivered units match the requested hermetic seal specifications and packaging format. Ensure all documentation, including test reports and material certifications, accompanies the shipment to satisfy regulatory requirements for defense or aerospace procurement channels.

Diode Arrays Selection Notes

Select this component when hermetic sealing and high-temperature stability are mandatory. The three-pin ceramic configuration distinguishes it from standard plastic-packaged equivalents. Consider the 4 A surge current rating for transient protection needs. Verify that the 50 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements before integration into the design.

Diode Arrays Part Context

This part belongs to the 1N4150 family of silicon signal diodes manufactured under MIL-PRF-19500/231 specifications. It shares functional similarities with the 1N3600 but differs in package style and specific military qualification levels. The UBCA suffix denotes the specific three-pin ceramic flat pack variant used in ruggedized electronics where standard DO-35 axial leads are unsuitable.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.

Does this component meet military specifications?

Yes, it is available in JAN, JANTX, and JANTXV grades per MIL-PRF-19500/231.

What is the peak forward surge current rating?

The device supports a peak forward surge current of 4 A for a 1 µs pulse duration.

1N4150UBCA1N4150UBCA
$18.71
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