1N4780

Single Zener Diodes Overview

The Microchip Technology 1N4780 is a silicon voltage reference diode designed for precision applications. It features an 8.5 V nominal Zener voltage and operates within a wide temperature range from -65 °C to +175 °C. The device utilizes a glass axial package (DO-35) with isolated terminal connections. Key electrical characteristics include a maximum power dissipation of 0.4 W and a low voltage temperature coefficient, ensuring stable performance under varying thermal conditions.

Single Zener Diodes Feature Summary

• Temperature compensated design for stable voltage regulation across extreme thermal environments
• High-temperature capability supporting operation up to 175 °C
• Glass encapsulation providing isolation and robust physical protection

Single Zener Diodes Applications

• Precision voltage reference circuits in harsh environments
• Temperature-compensated regulator designs
• Industrial instrumentation requiring high stability

Single Zener Diodes Procurement Notes

Verify the specific manufacturer source, as STMicroelectronics also lists this part number. Confirm the exact package style and tolerance class required for your application. Ensure the supplier provides official datasheets matching the intended specifications before procurement.

Single Zener Diodes Selection Notes

Select this component when high-temperature stability is critical. The 8.5 V output suits specific reference needs. Compare against other 1N47xx series variants if different voltage levels are required. Verify the operating temperature range meets system demands.

Single Zener Diodes Part Context

This component belongs to the standard Zener diode family used for voltage regulation. It serves as a fundamental passive element in analog circuitry. The axial leaded format facilitates through-hole mounting on printed circuit boards.

Single Zener Diodes Replacement Considerations

Check for equivalent parts from other manufacturers offering identical 8.5 V ratings and DO-35 packages. Ensure replacement devices meet the same temperature coefficient and power dissipation requirements.