Bipolar RF Transistors 2A5 product image

2A5

  • Description:RF TRANS NPN 22V 3.7GHZ 55ET
  • Series:-

SKU:21d6ed8173ee Category: Brand:

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2A5 is listed in the Bipolar RF Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is RF TRANS NPN 22V 3.7GHZ 55ET. Review the specifications below when checking this part for your BOM.

Bipolar RF Transistors specifications for 2A5

  • Description:RF TRANS NPN 22V 3.7GHZ 55ET
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):22V
  • Frequency - Transition:3.4GHz ~ 3.7GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB ~ 9dB
  • Power - Max:5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 100mA, 5V
  • Current - Collector (Ic) (Max):3mA
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:55ET
  • Supplier Device Package:55ET
  • Grade:-
  • Qualification:-

Bipolar RF Transistors datasheet and documents for 2A5

2A5

Bipolar RF Transistors Overview

The Microsemi Corporation 2A5 is a bipolar NPN transistor designed for radio frequency applications. It operates with a maximum voltage of 22V and supports frequencies up to 3.7GHz. The device utilizes a 55ET chassis mount package, suitable for robust industrial or military environments requiring high-frequency signal processing capabilities within specified thermal and electrical limits.

Bipolar RF Transistors Feature Summary

  • High-frequency operation capability up to 3.7GHz
  • Chassis mount construction for secure installation
  • NPN bipolar transistor architecture

Bipolar RF Transistors Applications

  • RF signal amplification in communication systems
  • Military aerospace electronic equipment
  • Industrial RF circuitry

Bipolar RF Transistors Procurement Notes

Verify the specific manufacturer source, as component listings may originate from authorized distributors or third-party sellers rather than direct Microsemi inventory. Confirm the exact package type and pinout configuration against the official datasheet before integration. Ensure compliance with relevant export control classifications and environmental standards applicable to the procurement region.

Bipolar RF Transistors Selection Notes

Select this component when a chassis-mounted NPN transistor is required for RF applications operating below 3.7GHz. Consider the 22V voltage limit and thermal management requirements associated with the 55ET package. Evaluate alternative surface-mount options if space constraints preclude chassis mounting solutions.

Bipolar RF Transistors Part Context

This component belongs to the discrete semiconductor product category, specifically within the transistor segment. It represents a specialized RF solution distinct from Microsemi's broader portfolio of FPGAs, SoCs, and power management ICs, targeting niche high-frequency analog applications.

Bipolar RF Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the official datasheet for equivalent specifications or contact authorized distributors for cross-reference recommendations.

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