2ED21084S06JXUMA1

Gate Driver Overview

The 2ED21084S06JXUMA1 is a half-bridge gate driver designed for IGBT and MOSFET control. It features an integrated bootstrap diode and operates within a supply voltage range of 10 V to 20 V. The device provides a source current of 0.29 A and a sink current of 0.7 A. Maximum propagation delay is 300 ns, with rise and fall times of 100 ns and 35 ns respectively. It functions between -40°C and +125°C in a DSO-8 package.

Gate Driver Feature Summary

• Integrates a bootstrap diode to simplify high-side drive circuitry
• Supports both inverting and non-inverting logic inputs
• Includes shutdown functionality for safe operation management

Gate Driver Applications

• IGBT and MOSFET switching control
• Industrial motor drives
• Power supply inverters

Gate Driver Procurement Notes

Verify the specific suffix J versus UMA1 against official Infineon documentation to confirm exact ordering specifications. Ensure compatibility with required isolation standards if applicable. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.

Gate Driver Selection Notes

Select this component when a compact half-bridge solution with an integrated bootstrap diode is required. Consider the 0.7 A sink current capability for driving medium-power switches. Evaluate the DSO-8 package constraints against PCB space limitations and thermal dissipation requirements for the target application environment.

Gate Driver Part Context

This part belongs to the 2ED2108 series of level shift drivers from Infineon Technologies. It is specifically engineered for applications requiring reliable gate driving of power semiconductors. The series emphasizes integration by combining driver and bootstrap components into a single small footprint package.

Gate Driver Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may lack the integrated bootstrap diode or specific current ratings.