2EDL8023GXUMA1

Gate Driver Overview

The Infineon Technologies 2EDL8023GXUMA1 is a junction-isolated high-side and low-side gate driver IC from the EiceDRIVER family. It features a 120 V boot voltage rating with peak output currents of 3 A source and 6 A sink. The device operates on a supply voltage range of 8 V to 17 V and utilizes a PG-VDSON-8-4 package. Propagation delays are specified at 45 ns for both turn-on and turn-off states, supporting high-frequency switching applications.

Gate Driver Feature Summary

• Junction isolation technology provides functional galvanic isolation between control and power stages.
• Integrated bootstrap diode simplifies high-side driver circuit design by eliminating external components.
• Non-inverting logic configuration ensures direct signal transmission from input to output.

Gate Driver Applications

• Industrial motor drives
• Inverter circuits
• Power supply systems

Gate Driver Procurement Notes

Verify the specific ordering suffix 'XUMA1' against the manufacturer's current product status page to confirm availability and lifecycle stage. Ensure that the PG-VDSON-8-4 package footprint matches the target PCB layout requirements before finalizing procurement orders.

Gate Driver Selection Notes

Select this component when a compact solution with integrated bootstrap functionality is required for 120 V applications. The 45 ns propagation delay suits medium-speed switching needs, while the 3 A/6 A drive capability supports standard IGBT or MOSFET loads in industrial environments.

Gate Driver Part Context

This part belongs to the 2EDL8x2x series of EiceDRIVER gate drivers. It represents a specialized variant within Infineon's portfolio designed for robust industrial performance, offering a balance between drive strength and physical size through its advanced packaging technology.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers: 2EDL8023G3CXTMA1, 2EDL8023G3C.

Gate Driver FAQ

What type of isolation does the 2EDL8023GXUMA1 utilize?

It uses junction isolation (JI) technology to provide functional galvanic isolation between the control and power sections.

Does this IC include an internal bootstrap diode?

Yes, the datasheet specifies an integrated bootstrap diode for the high-side driver section.