2N3489

Single Bipolar Transistors Overview

The Microchip Technology 2N3489 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 500 mA. The device operates within a temperature range of -65°C to +200°C, utilizing a TO-5AA metal can package. With a power dissipation capacity of 1 W, it provides reliable performance in high-reliability environments requiring robust semiconductor components.

Single Bipolar Transistors Feature Summary

• High-temperature operation capability up to 200°C junction temperature
• Robust mechanical construction using hermetic metal can packaging
• Suitable for general-purpose switching and linear amplification circuits

Single Bipolar Transistors Applications

• Military and aerospace electronic systems
• Industrial control circuitry
• High-reliability communication equipment

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot traceability and quality certification levels required for your application before procurement. Confirm that the ordering suffix matches the exact electrical binning and mechanical drawing specifications needed. Ensure compliance with all relevant environmental regulations and export control classifications applicable to this component type.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN transistor with high thermal stability is required. Compare its 60 V breakdown voltage and 500 mA current limits against circuit demands. Consider the TO-5AA package constraints for board layout and mounting requirements relative to alternative plastic-packaged transistors.

Single Bipolar Transistors Part Context

This part belongs to the standard military-grade NPN transistor family produced by Microchip Technology. It shares similar structural characteristics with other devices in the 2N34xx series, offering consistent performance metrics for ruggedized electronics design. The component serves as a fundamental discrete semiconductor element for analog and digital signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Cross-reference with equivalent parts such as the 2N3489A or compatible MIL-spec equivalents only if verified datasheet parameters match exactly. Validate pinout compatibility and thermal resistance values before substitution.