2N3507A

Single Bipolar Transistors Overview

The 2N3507A is a silicon NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 3 A and a collector-emitter breakdown voltage of 50 V. The device has a power dissipation rating of 1 W and operates at temperatures up to 200 °C. It utilizes a TO-39 metal can package with three pins, where the case is connected to the collector. The minimum DC current gain (hFE) is specified as 20.

Single Bipolar Transistors Feature Summary

• Hermetically sealed metal can construction for environmental protection
• High thermal stability supporting operation up to 200 °C
• Robust current handling capability of 3 A

Single Bipolar Transistors Applications

• Military aerospace systems requiring radiation hardness
• High-reliability industrial control circuits
• Harsh environment signal amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix code on the component marking against official datasheets to confirm exact electrical tolerances and qualification standards. Ensure the supplier provides traceable documentation for military or space-grade variants. Confirm package integrity and pin configuration match the TO-39 specification before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and radiation tolerance are required over standard commercial alternatives. Consider the TO-39 package constraints for PCB layout and thermal management. Evaluate the 50 V voltage limit and 3 A current capacity against circuit demands to ensure safe operating area compliance during peak load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2N3507 family of NPN transistors produced under military specifications. Variants such as JAN2N3507A and JANTXV2N3507L share core characteristics but differ in screening levels and quality assurance protocols. The base 2N3507 designation defines the fundamental electrical parameters and physical form factor used across these specialized applications.

Single Bipolar Transistors Replacement Considerations

JAN2N3507A

Single Bipolar Transistors FAQ

What is the maximum operating temperature for the 2N3507A?

The maximum operating temperature is 200 °C.

How is the collector terminal connected in the TO-39 package?

The metal case is electrically connected to the collector.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 20.