2N3773

Single Bipolar Transistors Overview

The Microchip Technology 2N3773 is a silicon NPN power transistor housed in a TO-3 metal flange mount package. It supports a maximum collector current of 16 A and a collector-emitter voltage of 140 V. The device features a maximum power dissipation of 150 W and operates at junction temperatures up to 175 °C. Designed for high-power applications, it utilizes a two-terminal configuration with the case connected to the collector.

Single Bipolar Transistors Feature Summary

• High-current capability supporting continuous collector currents up to 16 A
• Robust thermal management via metal flange mount construction
• Direct collector connection to the mounting surface for efficient heat sinking

Single Bipolar Transistors Applications

• High-power linear regulation circuits
• Industrial motor control systems
• Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as the 2N3773 specification originates from MOSPEC. Microchip Technology does not list this specific part number in its official product portfolio. Ensure the supplier provides documentation confirming the component meets the standard 2N3773 electrical parameters before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling in a traditional through-hole metal package. The TO-3 form factor necessitates direct mounting to a heatsink due to the collector-case connection. Verify that the thermal resistance characteristics align with the system's cooling requirements for sustained 16 A operation.

Single Bipolar Transistors Part Context

The 2N3773 is a legacy NPN power transistor originally defined by JEDEC standards. While historically associated with manufacturers like MOSPEC, it serves as a standard reference for high-power switching and amplification. The TO-3 package remains prevalent in industrial equipment where robust mechanical mounting and high thermal conductivity are critical.