Jfets 2N5114-E3 product image

2N5114-E3

$5.05
  • Description:JFET P-CH TO206AA
  • Series:-

SKU:20410ad4bf2a Category: Brand:

  
  • Quantity
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2N5114-E3 is listed in the Jfets range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is JFET P-CH TO206AA. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N5114-E3

  • Description:JFET P-CH TO206AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-206AA (TO-18)
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for 2N5114-E3

2N5114-E3

Jfets Overview

The 2N5114-E3 is a silicon N-channel junction field-effect transistor (JFET) manufactured by Vishay Siliconix. It features an axial leaded TO-92 package designed for through-hole mounting. The device operates with a drain-source breakdown voltage of 25 V and a gate-source cutoff voltage of -4 V. Key electrical parameters include a continuous drain current of 10 mA, a maximum power dissipation of 310 mW, and a typical forward transconductance of 2000 µmhos at zero gate bias. The component supports a wide operating temperature range from -65 °C to +175 °C.

Jfets Feature Summary

  • Utilizes TrenchFET process technology for optimized performance characteristics
  • Provides high input impedance suitable for low-noise signal applications
  • Features robust thermal stability across extended industrial temperature ranges

Jfets Applications

  • Low-noise preamplifier stages in audio equipment
  • Constant current source circuits
  • High-impedance buffer amplifiers

Jfets Procurement Notes

Verify the specific suffix E3 confirms RoHS compliance status against the latest manufacturer datasheet before integration. Confirm that the TO-92 axial lead configuration matches the target PCB footprint requirements. Ensure design margins account for the specified -4 V gate-source cutoff voltage to prevent unintended conduction in off-state conditions.

Jfets Selection Notes

Select this component when a discrete JFET solution is required for low-noise analog front ends rather than integrated MOSFET alternatives. Consider the 10 mA current limit and 310 mW power dissipation constraints during thermal management planning. Evaluate the -4 V pinch-off voltage against control circuit capabilities to ensure proper biasing within the active region.

Jfets Part Context

This part belongs to the standard discrete JFET lineup from Vishay Siliconix, historically significant for providing reliable enhancement-mode or depletion-mode switching and amplification. The 2N5114 designation aligns with traditional military and industrial specifications, offering a direct replacement path for legacy designs requiring axial leaded packaging.

Jfets Replacement Considerations

Cross-reference with 2N5457 or J111 equivalents if pinout compatibility is critical. Verify that substitute devices maintain similar noise figures and transconductance values to preserve circuit performance integrity.

2N5114-E32N5114-E3
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