Single Bipolar Transistors 2SB1150-AZ product image

2SB1150-AZ

$0.63
  • Description:TRANS PNP DARL 70V 3A TO-126
  • Series:-

SKU:21663ee960f8 Category: Brand:

  
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2SB1150-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS PNP DARL 70V 3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1150-AZ

  • Description:TRANS PNP DARL 70V 3A TO-126
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):70 V
  • Vce Saturation (Max) @ Ib, Ic:1.2V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1.5A, 2V
  • Power - Max:1.3 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1150-AZ

2SB1150-AZ

Single Bipolar Transistors Overview

The 2SB1150-AZ is a PNP Darlington bipolar junction transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 70 V and a maximum continuous collector current of 3 A. The device is designed for through-hole mounting in the TO-126 package, offering a power dissipation rating of 1.3 W at case temperature and up to 15 W with adequate heatsinking. It exhibits a saturation voltage of -1.2 V and operates within a wide temperature range, supporting applications requiring high-temperature performance up to 175°C.

Single Bipolar Transistors Feature Summary

  • Darlington configuration providing high current gain
  • Through-hole TO-126 packaging for robust mechanical mounting
  • High-temperature capability suitable for demanding environments

Single Bipolar Transistors Applications

  • High-power switching circuits
  • Industrial control systems
  • Automotive electronics applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches project requirements. Confirm that the TO-126 through-hole package aligns with PCB layout constraints. Ensure thermal management strategies account for the 1.3 W case dissipation limit. Validate component authenticity through authorized distribution channels to guarantee reliability in critical operations.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring PNP Darlington topology with moderate current handling. Consider the 70 V breakdown voltage against circuit peak voltages. Evaluate the TO-126 package size against available board space. Assess thermal resistance requirements based on ambient operating conditions and heat sinking capabilities.

Single Bipolar Transistors Part Context

This part belongs to Renesas' Bipolar Power Transistors series, which includes devices optimized for high temperature and low saturation voltage. The family supports various power levels and packages, catering to diverse industrial and automotive needs while maintaining consistent quality standards across product lines.

Single Bipolar Transistors Replacement Considerations

The 2SB1151-S1-AZ is a related PNP transistor in the same series but offers different electrical characteristics including 60 V breakdown and 5 A current capacity. Verify pinout compatibility and thermal performance before substitution.

2SB1150-AZ2SB1150-AZ
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