Single Bipolar Transistors 2SB14140RA product image

2SB14140RA

  • Description:TRANS PNP 150V 1A MT-3-A1
  • Series:-

SKU:663cf3c0ef3c Category: Brand:

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2SB14140RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 150V 1A MT-3-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB14140RA

  • Description:TRANS PNP 150V 1A MT-3-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:130 @ 150mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-3-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB14140RA

2SB14140RA

Single Bipolar Transistors Overview

The Panasonic 2SB1414RA is a silicon PNP epitaxial planar power transistor designed for low-frequency driver and high-power amplification applications. It serves as the complementary device to the 2SD2134 NPN transistor. The component features an MT-3-A1 package with absolute maximum ratings of -150V collector-emitter voltage, -1A continuous collector current, and 1.5W power dissipation at 25°C ambient temperature. Electrical characteristics include a transition frequency (fT) of 200MHz and a forward current transfer ratio (hFE) ranging from 90 to 330 depending on the rank classification.

Single Bipolar Transistors Feature Summary

  • Designed for low-frequency driver and high-power amplification circuits
  • Complementary pairing available with the 2SD2134 NPN transistor
  • Supports automatic insertion processes utilizing radial taping

Single Bipolar Transistors Applications

  • Low-frequency driver circuits
  • High-power amplification systems
  • General electronic equipment such as office machines and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your design, as performance varies by bin. Confirm the latest lifecycle status via official channels, as this component may be subject to maintenance or discontinuation plans. Ensure compliance with export control regulations if applicable. Always request the most up-to-date product standards before finalizing mass production designs.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on the required gain stability for the application. Consider the thermal resistance characteristics when designing heat sinking solutions, as power dissipation drops significantly without a heatsink. Verify that the operating environment remains within the specified junction temperature limits to ensure reliability. Use the complementary 2SD2134 for balanced push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic silicon PNP epitaxial planar transistor family. It is engineered specifically for power switching and amplification tasks where moderate speed and high current handling are necessary. The MT-3-A1 package provides a robust mechanical structure suitable for through-hole mounting in various industrial and consumer electronics assemblies.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD2134 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

2SB14140RA2SB14140RA

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