Single Bipolar Transistors 2SB1420 product image

2SB1420

  • Description:TRANS PNP DARL 120V 16A TO-3P
  • Series:-

SKU:0d35a5b19234 Category: Brand:

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2SB1420 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS PNP DARL 120V 16A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1420

  • Description:TRANS PNP DARL 120V 16A TO-3P
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):16 A
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 16mA, 8A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 8A, 4V
  • Power - Max:80 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1420

2SB1420

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SB1420 is a Silicon PNP Epitaxial Planar Darlington Transistor housed in an MT-100 (TO-3P) package. It features a collector-emitter breakdown voltage of -120 V and a continuous collector current rating of -16 A, with a peak pulse current of -26 A. The device provides a minimum DC current gain (hFE) of 2000 at -8 A and -4 V. Maximum power dissipation reaches 80 W at a case temperature of 25°C. Key electrical characteristics include a maximum collector-base cutoff current of -10 mA and a typical transition frequency of 50 MHz.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for heavy-duty switching applications
  • Integrated Darlington configuration providing high DC current gain
  • Robust thermal performance with defined safe operating area limits

Single Bipolar Transistors Applications

  • Chopper Regulator circuits
  • DC Motor Driver systems
  • General Purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the component status carefully before procurement as the datasheet explicitly states this part is not recommended for new designs. Confirm that existing inventory or legacy stock meets your specific project requirements. Ensure compatibility with existing circuit designs rather than initiating new development using this component.

Single Bipolar Transistors Selection Notes

Select this component only for maintenance or replacement purposes where the original design utilized the 2SB1420. Evaluate if modern alternatives offer improved efficiency or availability. Consider the TO-3P mounting requirements and verify that the thermal management infrastructure supports the specified power dissipation ratings under actual operating conditions.

Single Bipolar Transistors Part Context

This component belongs to Sanken's lineup of high-power PNP epitaxial planar transistors designed for robust industrial use. The MT-100 package facilitates direct heatsink mounting. As a Darlington pair, it simplifies drive circuitry by offering substantial current amplification without requiring complex base driver stages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the 'Not Recommended for New Designs' status, sourcing identical replacements may be difficult; consult manufacturer channels for obsolescence management options.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The maximum continuous collector current is -16 A, with a peak pulse current rating of -26 A.

Is this transistor suitable for new product designs?

No, the datasheet explicitly states that the 2SB1420 is not recommended for new designs.

What is the typical transition frequency?

The typical transition frequency (fT) is 50 MHz when measured at VCE = -12 V and IE = 1 A.

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