Single Bipolar Transistors 2SB1457(T6CANO,F,M product image

2SB1457(T6CANO,F,M

  • Description:TRANS PNP 100V 2A TO-92MOD
  • Series:-

SKU:6ee38061b542 Category: Brand:

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2SB1457(T6CANO,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 100V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1457(T6CANO,F,M

  • Description:TRANS PNP 100V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1A, 2V
  • Power - Max:900 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1457 is a silicon PNP epitaxial type Darlington transistor designed for micro motor drive, hammer drive, power switching, and power amplifier applications. It features a high DC current gain of 2000 (min) at VCE = −2 V and IC = −1 A, alongside a low collector-emitter saturation voltage of −1.5 V (max) under the same conditions. The device operates with a maximum collector-emitter voltage of −100 V and supports a continuous collector current of −2 A in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • High DC current gain capability reaching a minimum of 2000 at specified operating currents
  • Low collector-emitter saturation voltage to minimize power loss during conduction
  • Integrated internal base-emitter resistance network characteristic of Darlington configuration

Single Bipolar Transistors Applications

  • Micro motor drive circuits
  • Hammer drive mechanisms
  • Power switching applications
  • Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific lot number variations regarding environmental compliance. Confirm package authenticity matches the JEDEC TO-92MOD standard and validate absolute maximum ratings against your specific thermal management design requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current amplification is required within a compact form factor. The −100 V collector-emitter breakdown voltage accommodates moderate voltage levels, while the −2 A continuous current rating suits low-to-medium power loads. Ensure the application benefits from the inherent high gain to reduce base drive complexity.

Single Bipolar Transistors Part Context

This part belongs to the category of discrete bipolar junction transistors manufactured using silicon epitaxial processes. It utilizes a Darlington configuration to achieve superior current handling compared to single-transistor designs. The TO-92MOD package provides a standardized footprint suitable for general-purpose electronics and industrial control systems requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

2SB1457(T6CANO,F,M2SB1457(T6CANO,F,M

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