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2SB1457(T6CANO,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 100V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SB1457 is a silicon PNP epitaxial type Darlington transistor designed for micro motor drive, hammer drive, power switching, and power amplifier applications. It features a high DC current gain of 2000 (min) at VCE = −2 V and IC = −1 A, alongside a low collector-emitter saturation voltage of −1.5 V (max) under the same conditions. The device operates with a maximum collector-emitter voltage of −100 V and supports a continuous collector current of −2 A in a JEDEC TO-92MOD package.
Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific lot number variations regarding environmental compliance. Confirm package authenticity matches the JEDEC TO-92MOD standard and validate absolute maximum ratings against your specific thermal management design requirements before finalizing procurement.
Select this component when high current amplification is required within a compact form factor. The −100 V collector-emitter breakdown voltage accommodates moderate voltage levels, while the −2 A continuous current rating suits low-to-medium power loads. Ensure the application benefits from the inherent high gain to reduce base drive complexity.
This part belongs to the category of discrete bipolar junction transistors manufactured using silicon epitaxial processes. It utilizes a Darlington configuration to achieve superior current handling compared to single-transistor designs. The TO-92MOD package provides a standardized footprint suitable for general-purpose electronics and industrial control systems requiring reliable switching performance.
No public confirmed substitute part numbers are available in the provided documentation.
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