Single Bipolar Transistors 2SB1462J0L product image

2SB1462J0L

$0.37
  • Description:TRANS PNP 50V 0.1A SSMINI3-F1
  • Series:-

SKU:839726fb3a3f Category: Brand:

  
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2SB1462J0L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 50V 0.1A SSMINI3-F1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1462J0L

  • Description:TRANS PNP 50V 0.1A SSMINI3-F1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 2mA, 10V
  • Power - Max:125 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:SSMini3-F1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1462J0L

2SB1462J0L

Single Bipolar Transistors Overview

The Panasonic 2SB1462J is a silicon PNP epitaxial planar transistor designed for general amplification. It features a collector-emitter voltage of -50 V and a continuous collector current rating of -100 mA, with a peak current capacity of -200 mA. The device operates within a junction temperature range up to 125 °C and dissipates 125 mW at 25 °C ambient conditions. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at -2 mA collector current, a transition frequency of 80 MHz, and a collector output capacitance of 2.7 pF. It utilizes the SS-Mini3-F1 package.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio for efficient signal amplification
  • SS-Mini type package enabling equipment downsizing and automatic insertion

Single Bipolar Transistors Applications

  • General amplification in office equipment
  • Signal processing in communications equipment
  • Amplification circuits in measuring instruments
  • Standard applications in household appliances

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as per EU Directive 2002/95/EC. Check the latest product standards on the official Panasonic website for any lifecycle changes, including maintenance or discontinuation plans, before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for standard general-purpose amplification tasks requiring low noise and high gain. Ensure the design accommodates the -50 V collector-emitter voltage limit and -100 mA current rating. Consider the thermal management requirements for 125 mW dissipation. Verify compatibility with the SC-89 footprint during PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SB series of small-signal PNP transistors. It serves as the complementary pair to the 2SD2216J NPN transistor. The series is engineered for general electronic equipment applications, providing reliable performance in standard operating environments.

Single Bipolar Transistors Replacement Considerations

Consult the official Panasonic semiconductor catalog for verified substitute part numbers. Cross-reference specifications such as hFE, VCEO, and package dimensions to ensure functional equivalence.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -50 V.

Is this transistor suitable for aerospace applications?

No, it is intended for standard applications like office and household equipment. Special applications requiring exceptional reliability are not recommended without prior consultation.

What is the typical forward current transfer ratio?

The forward current transfer ratio (hFE) ranges from 160 to 460 when measured at IC = -2 mA and VCE = -10 V.

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