2SB562-C-AP

Single Bipolar Transistors Overview

The 2SB562-C-AP is a PNP epitaxial silicon transistor designed for low-frequency power amplifier applications. It features a collector-emitter voltage of -20 V and a collector current rating of -1.0 A with a maximum power dissipation of 0.9 W. The device offers a DC current gain (hFE) range of 120 to 240 in the 'C' classification, a transition frequency of 350 MHz, and operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency power amplifier circuits
• Complementary pairing available with the 2SD468 NPN transistor
• Constructed with molded plastic case material rated UL 94V-0 flammability

Single Bipolar Transistors Applications

• Low-frequency power amplification stages
• General-purpose switching applications
• Audio signal processing circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning classification required for the application, as the datasheet defines distinct ranges for B and C grades. Confirm packaging requirements, noting that the AP suffix indicates ammo packing containing 2,000 pieces per box. Ensure compliance with halogen-free specifications if necessary by checking for the additional HF suffix designation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high current gain is required for audio or low-frequency power stages. The C-grade classification provides a wider gain spread suitable for general designs. Consider the complementary 2SD468 for push-pull configurations. Verify thermal management capabilities given the 0.9 W power dissipation limit in the TO-92L package.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components discrete transistor lineup, utilizing the standard TO-92L through-hole package. It serves as the PNP counterpart to the 2SD468 NPN device, facilitating matched pair implementations in amplifier topologies. The component is manufactured using epitaxial silicon processes optimized for reliable performance in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

The 2SD468 is documented as the complementary pair for this transistor. Direct substitutes should match the -20 V collector-emitter voltage, -1.0 A current rating, and TO-92L package form factor while maintaining similar hFE characteristics.

Single Bipolar Transistors FAQ

What is the difference between the B and C classifications for this transistor?

The classification denotes the DC current gain (hFE) range at IC=-500mA. The B grade covers 85 to 170, while the C grade covers 120 to 240.

Is this component compatible with the 2SD468?

Yes, the datasheet explicitly states that the 2SB562 forms a complementary pair with the 2SD468 NPN transistor.

How can I obtain a halogen-free version of this part?

Halogen-free availability is indicated by adding the '-HF' suffix to the part number, such as 2SB562-C-AP-HF.