Single Bipolar Transistors 2SB647-B-AP product image

2SB647-B-AP

  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-

SKU:80f0f9ba01ba Category: Brand:

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2SB647-B-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 80V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB647-B-AP

  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB647-B-AP

2SB647-B-AP

Single Bipolar Transistors Overview

The MCC 2SB647-B-AP is a PNP silicon epitaxial transistor in a TO-92MOD plastic package. It features a collector-emitter breakdown voltage of -80 Vdc and a collector-base breakdown voltage of -120 Vdc. The device supports a maximum collector current of -1.0 A and dissipates up to 0.9 Watts. DC current gain (hFE) for the B-rank ranges from 60 to 120 at -150 mA. Transition frequency reaches 140 MHz, with saturation voltages of -1 Vdc at -500 mA.

Single Bipolar Transistors Feature Summary

  • Plastic-encapsulated construction with UL 94 V-0 flammability rating
  • Capable of handling 0.9 Watts power dissipation
  • Designed for general-purpose switching and amplification applications

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Driver circuits requiring PNP topology

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation to confirm compliance status. The '-B' indicates hFE ranking, while '-AP' denotes Ammo Pack packaging. Confirm RoHS compliance details via manufacturer ordering information. Ensure authorized sourcing channels are used to guarantee part authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -80V collector-emitter capability is required. The B-rank offers a gain range of 60-120. Consider the TO-92MOD package for through-hole mounting. Verify thermal requirements against the 0.9W dissipation limit and ensure operating temperatures fall within the specified -55°C to +150°C range.

Single Bipolar Transistors Part Context

This part belongs to the 2SB647 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants like 2SB647A with different voltage ratings. The TO-92MOD package provides a compact form factor suitable for consumer electronics and industrial control boards where space efficiency is prioritized.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors with similar -80V V(BR)CEO and -1.0A Ic ratings in TO-92 packages. Verify pinout compatibility and hFE overlap before substitution.

2SB647-B-AP2SB647-B-AP

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