2SB647A-C-AP

Single Bipolar Transistors Overview

The MCC 2SB647A-C-AP is a PNP silicon epitaxial plastic-encapsulated transistor designed for general-purpose switching and amplification applications. It operates within a collector-emitter breakdown voltage of -100 Vdc and supports a maximum collector current of -1.0 A. The device features a DC current gain (hFE) ranging from 100 to 200 under standard test conditions, with a transition frequency of 140 MHz. It dissipates up to 0.9 Watts of power and functions reliably across an operating junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Plastic-encapsulated construction utilizing epoxy resin that meets UL 94 V-0 flammability ratings.
• Capable of handling a continuous collector current of -1.0 A with a collector-base voltage rating of 120 V.
• Designed for high-frequency performance with a transition frequency of 140 MHz at specified bias currents.
• RoHS compliant packaging designated by the 'P' suffix, ensuring lead-free finish.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages in consumer electronics
• Driver circuits requiring moderate power dissipation

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance requirements. The '-AP' designation indicates ammo pack packaging, while the '-HF' suffix denotes halogen-free material composition. Confirm that the component meets RoHS standards if required by your assembly process. Ensure the procurement channel is authorized to guarantee genuine parts and full traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -100 V collector-emitter breakdown voltage is required. It is suitable for applications demanding a collector current capability of -1.0 A and a power dissipation rating of 0.9 W. Consider the TO-92MOD package dimensions for board layout compatibility. Verify that the hFE rank C (100-200) aligns with the circuit's gain requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SB647 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants such as the 2SB647 and 2SB647A, differentiated primarily by their breakdown voltage specifications. The 2SB647A variant specifically offers a -100 V collector-emitter breakdown voltage, distinguishing it from lower-voltage counterparts in the same family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB647 and 2SB647A from the same manufacturer series. Cross-manufacturer replacements must match the PNP type, -100 V minimum V(BR)CEO, -1.0 A I_C, and TO-92MOD package constraints. Verify pinout compatibility and thermal characteristics before implementation.