2SB688

Single Bipolar Transistors Overview

The EVVO 2SB688 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 120 V and a continuous collector current capacity of 8 A. The device is housed in a TO-3PS through-hole package, suitable for high-power thermal management. Key electrical characteristics include a DC current gain (hFE) of at least 55 when tested at 1 A and 5 V, and a transition frequency of 10 MHz. The maximum power dissipation is rated at 80 W, with an operating junction temperature limit of 150°C. These specifications define its operational boundaries for robust electronic circuit designs.

Single Bipolar Transistors Feature Summary

• High current handling capability for demanding load applications
• Robust power dissipation performance in standard through-hole packaging
• Defined saturation voltage characteristics for efficient switching

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Amplifier stages requiring PNP topology
• Industrial control systems utilizing through-hole mounting

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation and exact part number against official component databases before procurement. Confirm that the TO-3PS package dimensions match your PCB or chassis requirements. Ensure that the thermal management solution supports the specified 80 W power dissipation limits under your specific operating conditions. Cross-reference the hFE and Vce(sat) values with your design constraints to guarantee compatibility.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 120 V breakdown and 8 A current capacity is required. The TO-3PS package necessitates adequate heatsinking due to the 80 W power rating. Consider the 10 MHz transition frequency for switching speed limitations. Verify that the 150°C junction temperature rating aligns with your thermal design goals and ambient operating environment.

Single Bipolar Transistors Part Context

The 2SB688 belongs to the family of discrete NPN/PNP bipolar junction transistors used in power electronics. Similar devices often share the TO-3PS form factor for high-current applications. This specific model serves as a complementary or alternative option to other high-power PNP transistors in the same voltage and current class, providing a standardized solution for legacy or specific industrial designs.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalent part numbers from the same or alternative manufacturers. Ensure that any replacement maintains identical pinout configurations for the TO-3PS package. Verify that the substitute device meets or exceeds the 120 V, 8 A, and 80 W ratings to prevent circuit failure.