2SB817C-1E

Single Bipolar Transistors Overview

The onsemi 2SB817C-1E is a PNP bipolar power transistor housed in a TO-3P-3L package. It supports a collector current of -12 A and withstands collector-emitter voltages up to -140 V. The device features a maximum collector-base voltage of -160 V and a total dissipation rating of 120 W at a case temperature of 25°C. Electrical characteristics include a DC current gain (hFE) ranging from 35 to 200, a transition frequency of 10 MHz, and a low saturation voltage of -2.0 V maximum.

Single Bipolar Transistors Feature Summary

• Utilizes MBIT process technology for enhanced performance
• Provides wide Safe Operating Area (SOA)
• Offers high durability against breakdown conditions

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• General switching applications
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-1E' corresponds to the tube packaging configuration containing 30 pieces per tube as documented in the official datasheet. Confirm that the component meets Pb-Free requirements. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity and traceability of the semiconductor components.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current handling capabilities with a PNP configuration. The TO-3P-3L package facilitates effective thermal management through direct mounting to heat sinks. Consider the specified junction temperature limits and derating curves for continuous operation under varying ambient temperatures to ensure long-term reliability.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon PNP power transistors designed for robust industrial and consumer electronics applications. Manufactured by onsemi, it complements NPN counterparts like the 2SD1047 in push-pull amplifier topologies. The device is engineered to deliver stable performance in audio and power conversion systems where high current capacity and thermal stability are critical design parameters.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB817C from other manufacturers such as Inchange Semiconductor or Sanyo Semicon Device. Verify pinout compatibility and electrical parameter alignment before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum collector current is rated at -12 A continuously, with a pulse capability of -20 A.

Does the device support high-frequency switching?

Yes, the gain-bandwidth product is specified at 10 MHz, supporting moderate-speed switching applications.

What is the recommended operating junction temperature range?

The storage temperature range is -55°C to +150°C, and the maximum operating junction temperature is 150°C.