2SB827R

Single Bipolar Transistors Overview

The onsemi 2SB827R is a silicon NPN power transistor designed for high-current switching applications. It features a collector-emitter saturation voltage (VCE(sat)) of 0.4 V maximum and supports a continuous collector current (IC) of 12 A with a collector-emitter breakdown voltage (VCEO) of 50 V. The device utilizes a low-saturation design to minimize conduction losses and offers wide safe operating area (ASO) characteristics for robust performance under transient conditions.

Single Bipolar Transistors Feature Summary

• Low-saturation collector-to-emitter voltage for reduced conduction loss
• Wide Safe Operating Area (ASO) providing high resistance to breakdown
• High current capability suitable for demanding switching loads

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Power converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'R' against the official onsemi datasheet to confirm tape-and-reel packaging or variant specifications. Ensure the component matches the required NPN configuration and package type for your circuit design. Cross-reference the part number with the manufacturer's latest ordering information to account for any Fairchild integration naming changes.

Single Bipolar Transistors Selection Notes

Select this component when a 50 V, 12 A NPN transistor with low saturation voltage is required. Compare the thermal dissipation capabilities and package constraints against the system's heat sink requirements. Verify that the switching speed and gain characteristics align with the drive circuitry limitations in the target application.

Single Bipolar Transistors Part Context

The 2SB827R belongs to the family of silicon PNP/NPN power transistors optimized for switching. It complements the 2SB826 (PNP) counterpart, offering matched electrical characteristics for push-pull configurations. This series is engineered for compact designs requiring high efficiency and reliability in power management systems.

Single Bipolar Transistors Replacement Considerations

The 2SB826 is the complementary PNP device within the same series. For direct replacement, verify pinout compatibility and ensure the substitute meets the 12 A / 50 V / 0.4 V VCE(sat) specifications.