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2SB860-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS PNP 100V 4A TO-220AB. Review the specifications below when checking this part for your BOM.
The 2SB860-E is a PNP bipolar junction transistor manufactured by Renesas Electronics Corporation. It is designed for through-hole mounting in the TO-220AB package. The device supports a maximum collector-emitter voltage of 100 V and a continuous collector current of 4 A. Its power dissipation rating is specified at 1.8 W. This component belongs to the discrete semiconductor products category, specifically within the single bipolar transistor segment.
Verify the specific manufacturer datasheet (ADE-208-861) for detailed electrical characteristics and thermal limits. Confirm that the TO-220AB package matches your PCB footprint requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference the part number suffix to confirm exact specifications.
Select this component when a PNP transistor with 100 V blocking voltage and 4 A current capacity is required. The TO-220AB package facilitates heat dissipation for 1.8 W power ratings. Consider thermal resistance values for heatsink design. Verify compatibility with control circuitry driving the base terminal.
This part is part of Renesas' discrete semiconductor portfolio, focusing on bipolar power transistors. It serves as a fundamental active component for power management and signal processing tasks. The TO-220AB form factor ensures mechanical stability and efficient thermal transfer in high-power environments.
Consult official substitution lists or equivalent parameter tables from Renesas for direct replacements. Ensure any substitute maintains identical voltage, current, and power ratings. Verify pinout compatibility for TO-220AB packages before implementation.
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