2SC1623

Single Bipolar Transistors Overview

The EVVO 2SC1623 is an NPN silicon surface-mount transistor housed in a SOT-23 package. It features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The device supports a maximum power dissipation of 200mW at 25°C ambient temperature, with a thermal resistance from junction to ambient of 625°C/W. Its transition frequency reaches 250MHz, suitable for general-purpose amplification and switching applications. The component operates within a junction and storage temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability with typical values reaching 200 under specified test conditions
• Robust voltage handling with a 50V collector-emitter breakdown rating
• Miniature SOT-23 plastic package designed for efficient surface mounting on circuits

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Electronic switching circuits
• Interface driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE ranking suffix (L4, L5, L6, or L7) required for your design, as this determines the minimum DC current gain. Confirm that the SOT-23 footprint matches your PCB layout dimensions. Ensure the operating environment stays within the specified thermal limits to maintain the 200mW power dissipation rating. Check RoHS compliance status if environmental regulations apply to your assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high gain is needed. The 50V VCEO makes it suitable for low-voltage logic interfaces. Consider the thermal resistance when designing for enclosed spaces, as derating may be necessary above 25°C ambient. Choose the appropriate hFE bin based on the required amplification consistency for your specific circuit topology.

Single Bipolar Transistors Part Context

This part belongs to the EVVO line of discrete semiconductor devices, specifically categorized as a small-signal NPN bipolar junction transistor. It is manufactured using silicon planar technology optimized for surface-mount assembly. The SOT-23 form factor allows for high-density board layouts compared to through-hole alternatives, making it a standard choice for modern consumer electronics and portable equipment designs.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.