2SC1623-L6-TP

Single Bipolar Transistors Overview

The 2SC1623-L6-TP is an NPN silicon epitaxial transistor manufactured by Micro Commercial Components (MCC). It operates with a continuous collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device features a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. Electrical characteristics include a DC current gain range of 200 to 400 for the L6 bin, a base-emitter saturation voltage of 0.86 V max at 100 mA, and a collector-emitter saturation voltage of 0.3 V max. It utilizes a SOT-23 surface-mount package.

Single Bipolar Transistors Feature Summary

• Halogen-free 'Green' device construction
• Moisture sensitivity level 1 classification
• Epoxy meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching applications
• Low-power linear amplifier circuits
• Digital logic interface stages

Single Bipolar Transistors Procurement Notes

Verify authenticity through authorized MCC distributors or direct procurement channels to ensure traceability and compliance with quality standards. Confirm the specific L6 binning requirement matches design specifications for current gain ranges. Check RoHS compliance status and packaging quantities against project requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low-voltage NPN switching with moderate gain. The L6 suffix indicates a specific hFE bin of 200 to 400, suitable for consistent amplification performance. Ensure thermal management accommodates the 200 mW dissipation limit in the SOT-23 package under expected ambient conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC1623 series of NPN silicon epitaxial transistors from Micro Commercial Components. It is designed as a general-purpose discrete semiconductor device for surface-mount assembly. The series offers complementary configurations and various gain bins to support diverse circuit requirements in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the SOT-23 package, 50V VCEO, 100mA IC, and 250MHz fT specifications. Verify equivalent hFE binning if gain consistency is critical. Cross-reference pinouts to ensure Base-Emitter-Collector alignment matches the original layout.