2SC1959-GR-AP

Single Bipolar Transistors Overview

The MCC 2SC1959-GR-AP is an NPN silicon epitaxial planar transistor housed in a TO-92 package. It features a collector-emitter voltage of 30 V, a collector current of 500 mA, and power dissipation of 500 mW. The GR suffix indicates a DC current gain (hFE) range of 200 to 400 at IC=100mA and VCE=1V. Transition frequency reaches 300 MHz. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for audio frequency low power amplifier applications
• Provides excellent hFE linearity for driver stage amplification
• Suitable for switching applications and 1 Watt amplifier circuits
• Complementary to the 2SA562TM PNP transistor

Single Bipolar Transistors Applications

• Audio frequency low power amplifier circuits
• Driver stage amplifier configurations
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical characteristics and packaging type. Confirm RoHS compliance status by checking for the designated suffix. Ensure procurement from authorized distributors to guarantee genuine parts with full traceability and adherence to quality standards.

Single Bipolar Transistors Selection Notes

Select this component when high DC current gain between 200 and 400 is required for signal amplification. Consider its complementary relationship with the 2SA562TM for push-pull or balanced circuit designs. Evaluate the 500 mW power dissipation limit and TO-92 package constraints for thermal management in the target application environment.

Single Bipolar Transistors Part Context

This device belongs to the 2SC1959 series of power silicon NPN transistors manufactured by Micro Commercial Components. The series includes variants distinguished by hFE classification suffixes such as O, Y, and GR. These transistors are engineered for robust performance in consumer electronics and general-purpose electronic equipment requiring reliable amplification and switching capabilities.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA562TM as the complementary counterpart. Verify pinout compatibility and electrical ratings before substituting with other NPN transistors in the TO-92 package.

Single Bipolar Transistors FAQ

What does the 'GR' suffix indicate for this part?

The 'GR' suffix designates the DC current gain (hFE) classification, specifying a minimum value of 200 and a maximum of 400 under standard test conditions.

Is this transistor compatible with lead-free soldering processes?

Yes, the product description confirms it has a lead-free finish and is RoHS compliant, making it suitable for modern surface mount and through-hole assembly processes.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (VCBO) is rated at 35 Vdc.