2SC1959-O-AP

Single Bipolar Transistors Overview

The MCC 2SC1959-O-AP is an NPN silicon epitaxial planar transistor designed for audio frequency low power amplifier, driver stage, and switching applications. It features excellent hFE linearity with a minimum DC current gain of 25 at VCE=6.0V and IC=400mA. The device supports a collector-emitter voltage of 30V, collector current of 500mA, and power dissipation of 500mW. Operating junction temperature ranges from -55°C to +150°C. The 'O' suffix indicates an hFE classification of 70–140 (at IC=100mA), while the '-AP' suffix denotes ammo packing in quantities of 2,000 pieces per box.

Single Bipolar Transistors Feature Summary

• Designed for audio frequency low power amplifier, driver stage, and switching applications
• Excellent hFE linearity ensuring stable performance across operating conditions
• Complementary to the 2SA562TM PNP transistor for push-pull configurations
• Epoxy encapsulation meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• Audio frequency low power amplifier circuits
• Driver stage amplification
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix carefully when sourcing replacements. The '-AP' suffix specifically indicates Ammo Packing containing 2,000 pieces per box. Ensure the 'O' hFE bin matches circuit requirements. Confirm RoHS compliance status if required by your manufacturing process, as standard versions may differ from halogen-free or specific compliant variants.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring moderate current handling up to 500mA and low saturation voltage. The 2SC1959-O variant provides a guaranteed hFE range of 70 to 140, suitable for linear amplifier stages where consistent gain is critical. Consider the complementary 2SA562TM for balanced push-pull designs. Evaluate thermal management capabilities given the 500mW power dissipation limit in the TO-92 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC1959 series of NPN power transistors manufactured by Micro Commercial Components. The series is characterized by its utility in audio and general-purpose electronics. The TO-92 plastic package offers a compact form factor for through-hole mounting. The product line includes various hFE bins and packaging options to accommodate different production needs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA562TM as the complementary PNP transistor. When replacing, ensure the substitute matches the 30V VCEO rating, 500mA IC capability, and TO-92 package type. Verify that the replacement's hFE characteristics align with the original design specifications.

Single Bipolar Transistors FAQ

What does the 'O' suffix indicate in the 2SC1959-O model?

The 'O' suffix designates the DC Current Gain (hFE) classification. For the 2SC1959-O, the hFE(1) range is specified as 70 to 140 when measured at IC=100mA and VCE=1.0V.

What is the maximum collector-emitter voltage for this transistor?

The maximum Collector-Emitter Voltage (VCEO) rating is 30V. The Collector-Base Breakdown Voltage (VCBO) is rated at 35V.

How is the 2SC1959-O-AP packaged?

The '-AP' suffix indicates Ammo Packing. Each ammo box contains 2,000 pieces of the transistor.