Single Bipolar Transistors 2SC2229-Y,F(J product image

2SC2229-Y,F(J

  • Description:TRANS NPN 150V 0.05A TO-92MOD
  • Series:-

SKU:d172c85d4e7c Category: Brand:

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2SC2229-Y,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-Y,F(J

  • Description:TRANS NPN 150V 0.05A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Power - Max:800 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2229-Y,F(J

2SC2229-Y,F(J

Single Bipolar Transistors Overview

The 2SC2229-Y,F(J is a silicon NPN triple diffused transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It features a collector-emitter breakdown voltage of 150 V minimum, a collector current rating of 50 mA, and a transition frequency of 120 MHz typical. The device operates with a maximum power dissipation of 800 mW and a junction temperature up to 150 °C. It utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for high-voltage switching applications
  • Low output capacitance suitable for video output circuits
  • High transition frequency supporting driver stage audio amplifier functions

Single Bipolar Transistors Applications

  • Black and White TV Video Output Applications
  • High-Voltage Switching Applications
  • Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component meets the required DC current gain classification for the intended circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation in low-power switching or amplification tasks. Ensure the operating conditions remain within the absolute maximum ratings to maintain reliability. Consider the thermal derating requirements for continuous operation at elevated ambient temperatures.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon NPN transistors utilizing the PCT (Planar Chip Technology) process. It is designed for general electronics applications, specifically targeting consumer electronics like television sets and audio equipment where moderate power handling and high voltage tolerance are necessary.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting.

2SC2229-Y,F(J2SC2229-Y,F(J

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