2SC2229-Y(T6MIT1FM

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:b9d4fa94fedb Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2229-Y(T6MIT1FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-Y(T6MIT1FM

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-Y(T6MIT1FM

2SC2229-Y(T6MIT1FM

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device offers a typical transition frequency of 120 MHz and a maximum collector output capacitance of 5.0 pF. It operates within a junction temperature range up to 150 °C with a maximum power dissipation of 800 mW. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for high-voltage switching applications
Low output capacitance suitable for video output circuits
High transition frequency supporting driver stage audio amplifier functions

Single Bipolar Transistors Applications

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the requested variant matches the exact electrical classification requirements for DC current gain (hFE) before procurement. Ensure the component meets all absolute maximum ratings for your specific operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling with low current capacity. The low output capacitance makes it appropriate for video signal processing tasks. Verify that the required hFE binning aligns with the 'Y' classification specifications provided in the datasheet electrical characteristics table.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2229 series of NPN transistors manufactured by Toshiba Semiconductor and Storage. It is designed using the Triple Diffused Type (PCT Process) technology. The device is packaged in the standard TO-92MOD form factor, weighing approximately 0.36 g.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout and electrical parameter alignment.