2SC2229-Y(T6MITIFM

Single Bipolar Transistors Overview

The Toshiba 2SC2229-Y is a silicon NPN triple diffused transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device offers a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, with a typical transition frequency of 120 MHz. Absolute maximum ratings include a collector-base voltage of 200 V, emitter-base voltage of 5 V, and collector power dissipation of 800 mW.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for high-voltage switching applications
• Low output capacitance suitable for video output circuits
• High transition frequency supporting driver stage audio amplifier functions

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Confirm the specific hFE binning classification required for your design, as the 'Y' suffix indicates a gain range of 120 to 240. Ensure the ordering suffix matches the exact packaging and marking requirements specified in the latest Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling within a small through-hole footprint. The Y-grade binning provides higher current gain than standard grades, making it suitable for low-current amplification tasks. Verify that the 800 mW power dissipation rating aligns with the thermal management capabilities of the target PCB layout under expected operating temperatures.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's line of silicon NPN transistors manufactured using the Triple Diffused Type (PCT Process). It is designed specifically for general electronics applications, including home appliances and office equipment. The TO-92MOD package allows for cost-effective mounting while maintaining robust electrical performance for consumer electronic circuits.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Generic replacements may not match the specific PCT process characteristics or the precise hFE binning associated with the Y suffix.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2229-Y?

The 'Y' suffix indicates a DC current gain (hFE) classification ranging from 120 to 240 when measured at VCE = 5 V and IC = 10 mA.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 200 V at an ambient temperature of 25°C.

Is this component intended for automotive or medical use?

No. The product is explicitly restricted from use in equipment requiring extraordinarily high reliability, such as medical devices, automotive systems, or aerospace applications.