2SC2229-Y(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2229-Y(TE6,F,M) is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device offers a typical transition frequency of 120 MHz and a maximum collector output capacitance of 5.0 pF. DC current gain (hFE) ranges from 120 to 240 for the Y classification. It operates within a junction temperature range up to 150 °C and dissipates up to 800 mW in a TO-92MOD package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with a minimum collector-emitter voltage rating of 150 V
• Low output capacitance designed to minimize signal loading effects
• High transition frequency suitable for high-speed switching applications

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component meets all absolute maximum ratings for your design, including collector power dissipation and junction temperature limits. Review the manufacturer's reliability handbook for derating concepts before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with low output capacitance is required for video or switching circuits. Ensure the application stays within the 50 mA collector current limit and 800 mW power dissipation constraints. Verify that the hFE classification matches the circuit requirements for the intended gain performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2229 series of silicon NPN transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes a triple diffused PCT process to achieve high breakdown voltage and high transition frequency characteristics. The component is housed in a JEDEC TO-92MOD plastic package designed for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as VCEO, IC, and package type.