Single Bipolar Transistors 2SC2619FCTL-E product image

2SC2619FCTL-E

$0.14
  • Description:TRANS NPN 30V 0.1A 3-MPAK
  • Series:-

SKU:7b4bf6694a1c Category: Brand:

  
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2SC2619FCTL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN 30V 0.1A 3-MPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2619FCTL-E

  • Description:TRANS NPN 30V 0.1A 3-MPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2mA, 12V
  • Power - Max:150 mW
  • Frequency - Transition:230MHz
  • Operating Temperature:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-MPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2619FCTL-E

2SC2619FCTL-E

Single Bipolar Transistors Overview

The 2SC2619FCTL-E is an NPN silicon epitaxial planar transistor manufactured by Renesas Electronics Corporation. It is designed for high-frequency amplifier applications, featuring a transition frequency of 230 MHz. The device supports a maximum collector current of 0.1 A and a collector-emitter voltage of 30 V. It is housed in the MPAK-3 surface-mount package, which utilizes a small outline form factor with dual gull-wing terminals.

Single Bipolar Transistors Feature Summary

  • Engineered as a silicon NPN epitaxial planar structure optimized for RF signal processing.
  • Provides stable amplification capabilities within high-frequency operational bands.
  • Utilizes a compact surface-mount package design suitable for automated assembly processes.

Single Bipolar Transistors Applications

  • High-frequency amplifier circuits
  • RF signal processing stages
  • Small-signal amplification modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix FCTL-E against official Renesas documentation to confirm exact packaging configuration and reel specifications. Ensure compatibility with standard SMT reflow profiles for the MPAK-3 package. Cross-reference the JESD-30 code R-PDSO-G3 to validate terminal arrangement and physical dimensions prior to integration into printed circuit board layouts.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 230 MHz transition frequency and 30 V collector-emitter voltage rating. The MPAK-3 package offers a compact footprint for space-constrained designs. Verify that the 0.1 A maximum collector current meets the load requirements of the intended amplifier stage without exceeding thermal dissipation limits under continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2619 series of small-signal transistors produced by Renesas Electronics. The series includes variants such as the 2SC2619FC and 2SC2619FBTR, which share similar electrical characteristics but may differ in packaging or tape-and-reel configurations. The 2SC2619FCTL-E specifically denotes the surface-mount variant intended for high-volume manufacturing environments.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC2619FC and 2SC2619FBTR from Renesas, provided the package and termination style match the design constraints. Verify pinout compatibility and absolute maximum ratings before substitution.

2SC2619FCTL-E2SC2619FCTL-E
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