2SC2655-O(ND2,AF)

Description：TRANS NPN 50V 2A TO-92MOD
Series：-

SKU:f80d05b59969 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2655-O(ND2,AF) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-O(ND2,AF)

Description：TRANS NPN 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2655-O(ND2,AF)

2SC2655-O(ND2,AF)

Single Bipolar Transistors Overview

The Toshiba 2SC2655-O(ND2,AF) is an NPN silicon epitaxial transistor manufactured using the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V. The device provides a minimum DC current gain (hFE) of 70 at IC = 0.5 A and 40 at IC = 1.5 A. Key electrical parameters include a low saturation voltage of 0.5 V max at 1 A, a transition frequency of 100 MHz typ., and a storage time of 1.0 μs typ. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient power switching
High-speed switching capability with short storage times
Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

Power amplifier circuits
General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking the lot number markings on the component body or packaging labels. Confirm that the specific ordering suffix matches the required environmental specifications. Ensure the design accounts for derating requirements under heavy loads as outlined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector power dissipation of 900 mW in a TO-92MOD package. Consider the complementary 2SA1020 for push-pull configurations. Evaluate the hFE classification 'O' for gains between 70 and 140. Verify thermal management strategies against the safe operating area curves provided in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC2655 series of NPN transistors designed for general electronics applications. It utilizes the PCT process technology to achieve specific performance characteristics. The device is intended for use in computers, office equipment, and measuring instruments, excluding unintended high-reliability uses.