2SK879-GR(TE85L,F)

Jfets Overview

The Toshiba Semiconductor and Storage 2SK879-GR(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose, impedance conversion, and condenser microphone applications. It features a small SC-70 surface-mount package with a maximum drain power dissipation of 100 mW and a junction temperature rating of 125 °C. The device exhibits high breakdown voltage (VGDS = −50 V), low noise (NF = 0.5 dB typ.), and high input impedance (IGSS = −1.0 nA max). The 'GR' suffix indicates a specific drain current classification range of 2.6 to 6.5 mA.

Jfets Feature Summary

• High breakdown voltage capability for robust operation
• Low noise figure suitable for sensitive signal processing
• High input impedance minimizing circuit loading

Jfets Applications

• General-purpose amplification circuits
• Impedance converter stages
• Condenser microphone preamplifiers

Jfets Procurement Notes

Verify the complete part number including the ordering suffix (TE85L,F) to ensure correct packaging and binning. Confirm that the GR drain current classification aligns with the required operational parameters for the target application design. Review the manufacturer's reliability handbook for derating guidelines before finalizing component selection.

Jfets Selection Notes

Select this component when low noise performance and high input impedance are critical requirements. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding gate-drain voltage and power dissipation limits. Consider the thermal characteristics and package size constraints during the PCB layout phase to maintain optimal device reliability.

Jfets Part Context

This JFET belongs to the 2SK879 series manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon N-channel junction technology housed in an SC-70 (SOT-323) surface-mount package. The device is optimized for audio frequency and low-frequency signal processing tasks where minimal noise introduction and high input resistance are necessary for accurate signal transmission.

Jfets Replacement Considerations

Consult official replacement lists or cross-reference databases for verified substitutes. Ensure any alternative component matches the electrical characteristics, specifically the drain current classification and noise figure, while maintaining compatibility with the SC-70 package footprint.

Jfets FAQ

What is the typical noise figure of the 2SK879-GR?

The typical noise figure is 0.5 dB, measured at VDS = 15 V, VGS = 0, RG = 100 kΩ, and f = 120 Hz.

What does the 'GR' suffix indicate for this part?

The 'GR' suffix specifies the drain current (IDSS) classification range, which is 2.6 to 6.5 mA under standard test conditions.

What is the maximum gate-drain breakdown voltage?

The maximum gate-drain breakdown voltage (V(BR)GDS) is rated at −50 V.