Jfets 2SK880-BL(TE85L,F) product image

2SK880-BL(TE85L,F)

$0.71
  • Description:JFET N-CH 50V SC70
  • Series:-

SKU:d72fbe384e7d Category: Brand:

  
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2SK880-BL(TE85L,F) is listed in the Jfets range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is JFET N-CH 50V SC70. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2SK880-BL(TE85L,F)

  • Description:JFET N-CH 50V SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):50 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):6 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.5 V @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds:13pF @ 10V
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for 2SK880-BL(TE85L,F)

2SK880-BL(TE85L,F)

Jfets Overview

The Toshiba Semiconductor and Storage 2SK880-BL(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a small SC-70 surface-mount package with a maximum drain power dissipation of 100 mW and a gate-drain breakdown voltage of −50 V. The device exhibits high forward transfer admittance, typically 15 mS at VDS = 10 V and VGS = 0. Electrical characteristics include a gate cut-off current of −1 nA maximum at VGS = −30 V and an input capacitance of 13 pF at 1 MHz. The BL suffix designates a specific drain current classification range.

Jfets Feature Summary

  • Designed specifically for audio frequency low noise amplifier applications
  • Features high forward transfer admittance for effective signal amplification
  • Provides high input impedance to minimize circuit loading effects
  • Utilizes a compact SC-70 surface-mount package for space-constrained designs

Jfets Applications

  • Audio frequency low noise amplifier circuits
  • High-fidelity audio pre-amplifier stages
  • Low-noise signal conditioning front-ends

Jfets Procurement Notes

Verify the component authenticity by checking the manufacturer marking against the official datasheet specifications. Confirm that the ordering suffix matches the required drain current classification for your specific circuit design requirements. Ensure compliance with environmental directives such as RoHS before finalizing procurement orders.

Jfets Selection Notes

Select this component when designing audio frequency amplifiers requiring low noise performance and high input impedance. The BL variant provides a higher drain current range compared to other classifications, suitable for specific biasing conditions. Evaluate thermal management capabilities within the 100 mW power dissipation limit during the design phase.

Jfets Part Context

This component belongs to the 2SK880 series of silicon N-channel JFETs manufactured by Toshiba Semiconductor and Storage. The series is engineered primarily for audio applications where low noise figures are critical. Different ordering suffixes indicate variations in drain current parameters while maintaining identical electrical characteristics and packaging.

Jfets Replacement Considerations

Cross-reference with other 2SK880 variants such as 2SK880-Y or 2SK880-GR if different drain current ranges are required. Verify pinout compatibility and package dimensions before substituting components in existing layouts.

2SK880-BL(TE85L,F)2SK880-BL(TE85L,F)
$0.71
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