2STR1230

$0.38

Description：TRANS NPN 30V 1.5A SOT-23-3
Series：-

SKU:1034c225ec74 Category: Single Bipolar Transistors Brand: STMicroelectronics

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Product introduction

2STR1230 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 30V 1.5A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2STR1230

Description：TRANS NPN 30V 1.5A SOT-23-3
Series：-
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：850mV @ 200mA, 2A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 500mA, 2V
Power - Max：500 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2STR1230

2STR1230

Single Bipolar Transistors Overview

The 2STR1230 is a low voltage fast-switching NPN power transistor manufactured using PB-HCD technology. It features a collector-emitter voltage (V_CES) of 30 V and a continuous collector current (I_C) of 1.5 A. The device offers very low saturation voltage, with V_CE(sat) ranging from 0.15 V to 0.85 V depending on operating conditions. DC current gain (h_FE) ranges from 80 to 560. Switching times include a turn-on time (t_on) of 70 ns and a turn-off time (t_off) of 380 ns under resistive load conditions.

Single Bipolar Transistors Feature Summary

Very low collector-emitter saturation voltage for reduced conduction losses
High current gain characteristic ensuring exceptional performance
Fast switching speed suitable for high-frequency applications
Miniature SOT-23 plastic package designed for surface mounting circuits

Single Bipolar Transistors Applications

LED drivers
Motherboard & hard disk drive circuits
Mobile equipment power management
DC-DC converters
Voltage regulation systems

Single Bipolar Transistors Procurement Notes

Verify the specific order code suffix when purchasing. The standard 2STR1230 is supplied in tape and reel packaging. The variant 2STR1230G includes the ECOPACK®2 grade designation, indicating compliance with specific environmental requirements. Confirm the required grade matches the project specifications before ordering to ensure correct material composition and regulatory adherence.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring compact surface-mount solutions with high current density capabilities. The PB-HCD technology provides a balance of low saturation voltage and high gain, making it suitable for efficient power switching. Ensure the application operates within the 30 V collector-emitter voltage limit and 1.5 A continuous current rating to maintain reliability and thermal stability.

Single Bipolar Transistors Part Context

This part belongs to STMicroelectronics' power bipolar transistor family, specifically utilizing the PB-HCD (power bipolar high current density) technology. It serves as the complementary NPN counterpart to the 2STR2230 PNP transistor. The series is engineered for energy-efficient designs, offering improved linearity and switching speeds compared to standard industry alternatives.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2STR2230 as the complementary PNP device. No other direct substitute part numbers are documented in the provided source material.