3LN01CPA-TB-E

Single FETs, MOSFETs Overview

The onsemi 3LN01CPA-TB-E is an N-channel enhancement mode MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of 30 V and a continuous drain current of 150 mA. The device utilizes a SOT-23 surface-mount package with three pins. Key electrical parameters include a maximum drain-source resistance of 12.8 Ω, a gate threshold voltage up to 1.3 V, and a maximum power dissipation of 250 mW. It operates at temperatures up to +150 °C with a typical gate charge of 1.58 nC at 10 V.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction for standard switching operations
• Optimized for low-voltage drive environments with a 1.5V drive series designation
• Compact SOT-23 surface-mount packaging for space-constrained designs

Single FETs, MOSFETs Applications

• Low-side switching in portable electronic devices
• Battery-powered equipment load control
• General-purpose signal switching in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (TB-E) against official onsemi documentation to confirm tape-and-reel configuration and RoHS compliance status. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring small form factor N-channel switching with moderate voltage ratings. Evaluate the 12.8 Ω Rds(on) against load requirements to ensure acceptable conduction losses. Confirm that the 150 mA current rating exceeds peak operational demands while maintaining thermal stability within the specified junction temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's portfolio of intelligent power and sensing technologies, specifically within the discrete semiconductor MOSFET category. It supports mission-critical power systems by providing robust reliability and scalable performance for low-power switching tasks in industrial and consumer sectors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter equivalence with alternative manufacturers if sourcing constraints require substitution.