7140LA35J

Overview

The Renesas Electronics Corporation 7140LA35J is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device utilizes a parallel interface and operates within a supply voltage range of 4.5V to 5.5V. Key timing specifications include a 35 nanosecond access time and a 35 nanosecond write cycle time for both word and page modes. It is housed in a 52-lead Plastic Leadless Chip Carrier (PLCC) package with dimensions of 19.13x19.13 mm. The component supports surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Feature Summary

• Dual-port architecture enabling independent simultaneous access from two separate processors or systems.

Applications

• Data buffering in high-speed digital signal processing systems
• Cache memory implementation in embedded microcontroller designs
• FIFO buffer applications in telecommunications equipment

Procurement Notes

Verify the specific package variant, as the 'J' suffix typically denotes PLCC packaging while other suffixes may indicate different form factors like CDIP. Confirm RoHS compliance status, as older production runs often lack lead-free certification. Check for End-of-Life notifications or Last Time Buy orders, as this component series has been discontinued by the manufacturer. Ensure compatibility with existing board layouts regarding pin assignments and thermal requirements.

Selection Notes

Select this component when a design requires independent read/write ports for concurrent data handling without bus contention. The 8Kb capacity suits small-scale buffering tasks where low latency is critical. Verify that the system power supply strictly maintains the 4.5V to 5.5V range to ensure reliable operation. Consider the physical footprint of the 52-PLCC package during PCB layout planning to ensure adequate clearance and soldering feasibility.

Part Context

This part belongs to the IDT/Renesas 7140SA/LA family of asynchronous dual-port SRAMs. These devices are designed for applications requiring high-speed data exchange between two masters. The LA series specifically offers faster timing characteristics compared to earlier SA variants. The family is characterized by CMOS technology, providing low power consumption relative to older bipolar technologies while maintaining fast access speeds suitable for real-time processing.

Replacement Considerations

Public confirmed substitute part numbers: None available.