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Product Detailed Parameters
- Description:IC SRAM 32KBIT PARALLEL 68PGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Dual Port, Asynchronous
- Memory Size:32Kbit
- Memory Organization:2K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:20ns
- Voltage - Supply:4.5V ~ 5.5V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Through Hole
- Package / Case:68-BPGA
- Supplier Device Package:68-PGA (29.46x29.46)
- Access Time:20 ns
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Overview
The Renesas Electronics Corporation 7143SA20G is a high-speed, asynchronous dual-port static random access memory (SRAM) IC. It features a storage capacity of 32Kb organized as 2K x 16 bits. The device supports parallel interface operation with a maximum access time of 20 ns and a write cycle time of 20 ns. It operates on a single 5V power supply within a voltage range of 4.5V to 5.5V. The component is housed in a 68-pin ceramic PGA package measuring 29.46x29.46 mm, designed for through-hole mounting. It functions within an ambient temperature range of 0°C to 70°C.
Feature Summary
- True dual-ported memory cells enable simultaneous independent access to the same memory location from both ports without conflict.
- On-chip port arbitration logic manages bus contention, allowing full-speed error-free operation in master/slave configurations without external discrete logic.
- Separate write control signals for the upper and lower bytes of each port facilitate easy expansion of data bus width to 32 bits or more.
- Supports battery backup operation with 2V data retention capabilities to preserve stored information during main power loss.
Applications
- High-speed data buffering in telecommunications systems requiring concurrent read/write operations
- Master/slave dual-port memory architectures in industrial automation controllers
- Real-time signal processing applications needing low-latency data exchange between processors
- Embedded systems requiring non-volatile-like data retention via battery backup mechanisms
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate package integrity upon receipt, ensuring no damage to the ceramic PGA leads. Cross-reference datasheet revisions to ensure compatibility with existing system designs. Check for alternative sourcing options given limited availability.
Selection Notes
Select this component when true dual-port functionality is required for simultaneous access to shared memory resources. Consider the 20 ns access speed for applications demanding fast asynchronous data transfer. Ensure the design accommodates the 68-pin PGA through-hole footprint and 5V logic levels. Evaluate thermal management needs for the specified commercial temperature range. Verify that the 32Kb capacity meets the system's memory organization requirements.
Part Context
The 7143SA series belongs to Renesas' high-speed dual-port SRAM family, originally developed under IDT branding. These devices utilize CMOS technology to provide reliable performance in demanding embedded environments. The 7143 variant specifically offers 2K x 16 organization, distinguishing it from other densities in the lineup. This series is known for its robust arbitration logic and flexible byte-write capabilities.
Replacement Considerations
- 7143LA20JG8
- 7133SA20G
FAQ
How does the 7143SA20G handle simultaneous access requests from both ports?
The device incorporates on-chip port arbitration logic that manages bus contention automatically. This allows both ports to access the same memory location simultaneously without requiring external discrete logic components.
What is the data retention capability during power failure?
The 7143SA20G supports battery backup operation, maintaining data retention at a minimum voltage of 2V when the main power supply is interrupted.
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