71P72804S200BQG

Overview

The IDT71P72804S200BQG is a synchronous QDR II SRAM IC with an 18 Mbit capacity organized as 1M x 18. It operates at a clock frequency of 200 MHz with an access time of 7.88 ns. The device supports parallel memory interfaces and requires a supply voltage between 1.7V and 1.9V. It is housed in a 165-CABGA (13x15) package and functions within a temperature range of 0°C to 70°C.

Feature Summary

• Synchronous Quad Data Rate II architecture for high-speed data handling
• Parallel interface supporting 1M x 18 memory organization
• Optimized for low power consumption with 1.7V to 1.9V supply requirements

Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Data center storage solutions

Procurement Notes

Verify component authenticity through authorized Renesas or IDT distributors due to end-of-life status. Confirm package integrity and pin alignment for the 165-CABGA form factor. Ensure supply voltage stability within the 1.7V to 1.9V range during operation. Check for RoHS compliance documentation if required by specific manufacturing standards.

Selection Notes

Select this component when synchronous QDR II performance is required for parallel data processing. Consider the 200 MHz clock speed and 7.88 ns access time for latency-sensitive applications. Evaluate the 165-CABGA footprint against PCB layout constraints. Compare power specifications against system thermal management capabilities.

Part Context

This part belongs to the IDT71P74 family of synchronous QDR II SRAMs, manufactured by Integrated Device Technology, now part of Renesas Electronics. The series is designed for high-bandwidth applications requiring fast read/write cycles. The 71P72804 variant specifically offers 18 Mbit density in a compact ball grid array package suitable for dense circuit board designs.

Replacement Considerations

Consult official Renesas documentation for qualified substitutes. Verify electrical compatibility and pinout correspondence before integration.