71T75802S100BGI

71T75802S100BGI

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:8e80c57671fa Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

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71T75802S100BGI

Overview

The Renesas 71T75802S100BGI is a synchronous static random-access memory (SRAM) integrated circuit belonging to the Zero Bus Turnaround (ZBT) family. It features an 18-megabit storage capacity organized as 1M x 18 bits. The device operates with a maximum clock frequency of 100 MHz and provides a typical access time of 5 ns. It utilizes a parallel interface and requires a core supply voltage ranging from 2.375 V to 2.625 V. The component is housed in a 119-pin PBGA package measuring 14x22 mm and supports an industrial operating temperature range of -40°C to +85°C.

Feature Summary

  • Zero Bus Turnaround architecture eliminates dead cycles during bus turnaround between read and write operations.
  • Internally synchronized output buffer enable removes the requirement for external Output Enable control signals.
  • Single Read/Write control pin simplifies interface logic by combining address, data, and control signal registers.
  • Supports four-word burst capabilities in either interleaved or linear modes for efficient data transfer.

Applications

  • High-performance embedded systems requiring fast memory access
  • Network infrastructure equipment and routers
  • Industrial automation controllers
  • Telecommunications base stations

Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm RoHS compliance status as historical records indicate non-compliance for some variants. Check moisture sensitivity level handling requirements before assembly. Validate package dimensions against PCB footprint specifications. Ensure supply chain stability as this specific part number may be subject to discontinuation notices.

Selection Notes

Select this component when system design demands high-speed synchronous memory with minimal bus turnaround latency. Compare against other ZBT SRAM options based on required access times and organizational formats. Consider thermal performance within the specified industrial temperature range. Evaluate power consumption characteristics relative to available supply voltage margins. Assess physical package constraints against available board space.

Part Context

This device is part of the IDT 71T75802 series, which represents Renesas' synchronous SRAM portfolio designed for high-speed applications. The series offers various speed grades and packaging options to accommodate different system requirements. The 71T75802 variant specifically targets applications needing reliable, fast memory solutions with simplified control logic.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference speed grades and package types when selecting alternatives. Ensure functional compatibility regarding voltage levels and interface protocols.

71T75802S100BGI71T75802S100BGI

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