71T75802S166BGI8

71T75802S166BGI8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:0a7386ac435c Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.5 ns
  • Grade:-
  • Qualification:-

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71T75802S166BGI8

Overview

The 71T75802S166BGI8 is a 18 Mbit Synchronous Zero Bus Turnaround (ZBT) Static Random Access Memory manufactured by Renesas Electronics. It features a memory organization of 512 k x 36 and operates with a maximum clock frequency of 166 MHz. The device supports a parallel interface with an access time of 3.5 ns. It functions within a supply voltage range of 2.375 V to 2.625 V, drawing a maximum current of 265 mA. The component is designed for operation in temperatures ranging from -40°C to +85°C and is housed in a 119-pin PBGA package.

Feature Summary

  • Supports synchronous single data rate (SDR) operations with burst counter functionality
  • Features pipelined outputs for high-speed data transfer
  • Utilizes Zero Bus Turnaround technology to minimize bus turnaround cycles

Applications

  • High-performance embedded systems requiring fast memory access
  • Network infrastructure equipment
  • Industrial control applications

Procurement Notes

Verify the specific suffix BGI8 against official Renesas documentation to confirm the industrial temperature grade (-40°C to +85°C) and package type. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity, as this component may be subject to discontinuation notices or limited availability. Confirm RoHS compliance status directly from the latest datasheet revision.

Selection Notes

Select this component when a 512 k x 36 organization is required for synchronous memory applications. Ensure the system design accommodates the 2.5 V core voltage and the specified operating temperature range. Compare performance metrics such as access time and clock frequency against alternative SRAM families if higher density or different interface requirements are needed.

Part Context

This part belongs to the Renesas 71T75802/71T75602 family of Synchronous ZBT SRAMs. These devices are engineered for high-speed data processing tasks where low latency and high bandwidth are critical. The family includes variants with different speeds and organizations, providing flexibility for various embedded memory needs in demanding electronic environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support or authorized distributor databases for potential cross-references or next-generation replacements.

71T75802S166BGI871T75802S166BGI8

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